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| SHINDENGEN Schottky Rectifiers (SBD) Single SF5S6 60V 5A FEATURES *oe Tj150*Z *oe PRRSM avalanche guaranteed *oe Fully Isolated Molding *oe Dielectric strength 1.5KV guaranteed APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) RATINGS *oeAbsolute Maximum Ratings (If not specified T =25*Z) Item Symbol Conditions Ratings Storage Temperature Tstg -55*150 Operating Junction Temperature Tj 150 Maximum Reverse Voltage VRM 60 Repetitive Peak Surge Reverse VoltagePulse width 0.5ms, duty 1/40 V RRSM 65 Average Rectified Forward Current 50Hz sine wave, R-load, Tc=134*Z IO 5 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25*Z 150 Repetitive Peak Surge Reverse Power Pulse width 10Es, Tj=25*Z PRRSM 330 Dielectric Strength Vdis Terminals to case, AC 1 minute 1.5 Mounting Torque F TOR (Recommended torque*0.3Nm) 0.5 *oeElectrical Characteristics (If not specified T =25*Z) Item Symbol Conditions Forward Voltage =5A Pulse measurement VF IF Reverse Current IR V=V Pulse measurement R RM Junction Capacitance Cj f=1MHz, V R =10V Thermal Resistance AEjc junction to case Unit *Z *Z V V A A W kV Nm Ratings Unit Max.0.58 V Max. 4.5 mA Typ.260 pF Max.3.5 *Z/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd SF5S6 Forward Voltage 10 Forward Current IF [A] 1 Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] SF5S6 Junction Capacitance f=1MHz Tc=25C TYP per diode 1000 Junction Capacitance Cj [pF] 100 0.1 1 10 Reverse Voltage VR [V] SF5S6 1000 Reverse Current Tc=150C [MAX] 100 Tc=150C [TYP] Tc=125C [TYP] Reverse Current IR [mA] 10 Tc=100C [TYP] Tc=75C [TYP] 1 0.1 Pulse measurement per diode 0.01 0 10 20 30 40 50 60 Reverse Voltage VR [V] SF5S6 15 Reverse Power Dissipation DC D=0.05 0.1 0.2 Reverse Power Dissipation PR [W] 10 0.3 0.5 5 SIN 0.8 0 0 10 20 30 40 50 60 70 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T SF5S6 6 Forward Power Dissipation Forward Power Dissipation PF [W] 5 D=0.8 4 0.2 3 0.05 2 0.1 0.3 SIN 0.5 DC 1 0 0 1 2 3 4 5 6 7 8 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T SF5S6 10 Derating Curve Average Rectified Forward Current IO [A] 8 DC D=0.8 6 0.5 SIN 0.3 4 0.2 0.1 2 0.05 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = 30V 0 0 IO VR tp D=tp /T T SF5S6 300 Peak Surge Forward Capability IFSM 10ms 10ms 250 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 200 150 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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